Semiconductor device with a steep sub-threshold slope
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United States of America Patent
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Jun 11, 2019
Grant Date -
Feb 1, 2018
app pub date -
Jul 28, 2016
filing date -
Jul 28, 2016
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Abstract
A method is presented for forming a semiconductor device. The method may include forming a source contact on the semiconductor substrate, forming a drain contact on the semiconductor substrate, and forming a gate structure on the semiconductor substrate between the source and drain contacts, the gate structure including a piezoelectric material having at least one graphene layer.
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