FinFETs with high quality source/drain structures
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United States of America Patent
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Mar 26, 2019
Grant Date -
Feb 1, 2018
app pub date -
Oct 6, 2017
filing date -
May 28, 2015
priority date (Note) -
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Abstract
A semiconductor structure is provided that includes a silicon germanium alloy fin located on a portion of a topmost surface of an insulator layer. A functional gate structure straddles a portion of the silicon germanium alloy fin and is located on other portions of the topmost surface of the insulator layer. A source structure is located on one side of the functional gate structure and a drain structure is located on another side of the functional gate structure. The source structure and the drain structure surround the other portions of the silicon germanium alloy fin and are located on a germanium graded silicon-containing region that is present at a footprint of the other portions of the silicon germanium alloy fin.
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