Semiconductor image sensor device having back side illuminated image sensors with embedded color filters
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United States of America Patent
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Jan 15, 2019
Grant Date -
Feb 1, 2018
app pub date -
Oct 9, 2017
filing date -
Apr 25, 2014
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Abstract
Disclosed is a method of fabricating a semiconductor image sensor device. The method includes providing a substrate having a pixel region, a periphery region, and a bonding pad region. The substrate further has a first side and a second side opposite the first side. The pixel region contains radiation-sensing regions. The method further includes forming a bonding pad in the bonding pad region; and forming light-blocking structures over the second side of the substrate, at least in the pixel region, after the bonding pad has been formed.
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