Thin film transistor, method for manufacturing the same, and display device including the same
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United States of America Patent
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May 7, 2019
Grant Date -
Feb 1, 2018
app pub date -
Jul 26, 2017
filing date -
Jul 29, 2016
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Abstract
Disclosed is a thin film transistor including both an N-type semiconductor layer and a P-type semiconductor layer, a method for manufacturing the same, and a display device including the same, wherein the thin film transistor may include a first gate electrode on a substrate; a first gate insulating film covering the first gate electrode; a semiconductor layer on the first gate insulating film; a second gate insulating film covering the semiconductor layer; and a second gate electrode on the second gate insulating film, wherein the semiconductor layer includes the N-type semiconductor layer and the P-type semiconductor layer.
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