Non-volatile memory device having nanocrystal floating gate and method of fabricating same
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United States of America Patent
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Feb 20, 2018
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Jul 26, 2016
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Jul 26, 2016
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Abstract
Methods are disclosed herein for fabricating non-volatile memory devices. An exemplary method forms a heterostructure over a substrate. The heterostructure includes at least one semiconductor layer pair having a first semiconductor layer and a second semiconductor layer disposed over the first semiconductor layer, the second semiconductor layer being different than the first semiconductor layer. A gate structure having a dummy gate is formed over a portion of the heterostructure, such that the gate structure separates a source region and a drain region of the heterostructure and a channel region is defined between the source region and the drain region. During a gate replacement process, a nanocrystal floating gate is formed in the channel region from the second semiconductor layer. In some implementations, during the gate replacement process, a nanowire is also formed in the channel region from the first semiconductor layer.
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