Laterally diffused metal oxide semiconductor device integrated with vertical field effect transistor
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United States of America Patent
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Apr 23, 2019
Grant Date -
Feb 1, 2018
app pub date -
Oct 11, 2017
filing date -
Apr 15, 2016
priority date (Note) -
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Abstract
An electrical device that in some embodiments includes a substrate including a lateral device region and a vertical device region. A lateral diffusion metal oxide semiconductor (LDMOS) device may be present in the lateral device region, wherein a drift region of the LDMOS device has a length that is parallel to an upper surface of the substrate in which the LDMOS device is formed. A vertical field effect transistor (VFET) device may be present in the vertical device region, wherein a vertical channel of the VFET has a length that is perpendicular to said upper surface of the substrate, the VFET including a gate structure that is positioned around the vertical channel.
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