Variable holding voltage silicon controlled rectifier using separate and distinct bipolars
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United States of America Patent
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Nov 20, 2018
Grant Date -
Feb 1, 2018
app pub date -
Aug 1, 2016
filing date -
Aug 1, 2016
priority date (Note) -
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Abstract
A silicon controlled rectifier (SCR) using separate bipolar transistors is disclosed. The separate bipolar SCR enables access to internal feedback terminals of the SCR, which may then may be used to adjust the gain of individual bipolar transistors. Further embodiments provide custom design latch up immune solutions. The latch up immunity is achieved by integrating an active Field Effect Transistor (FET) into the internal feedback node of the SCR. This provides access to ‘feedback’ node of the SCR allowing for latch-up free SCR design. The active FET times out in a short time period (e.g., microseconds) thus shutting off the SCR feedback mechanism making the SCR latch-up immune.
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