METHOD FOR FORMING BUMP STRUCTURE
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United States of America Patent
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Oct 5, 2017
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Mar 13, 2014
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Methods for forming semiconductor structures are provided. The method for forming a semiconductor structure includes forming a metal pad over a first substrate and forming a polymer layer over the metal pad. The method for forming a semiconductor structure further includes forming a seed layer over the metal pad and extending over the polymer layer and forming a conductive pillar over the seed layer. The method for forming a semiconductor structure further includes wet etching the seed layer using an etchant comprising H2O2. In addition, the step of wet etching the seed layer is configured to form an extending portion having a slope sidewall.
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