Semiconductor device having a dual material redistribution line
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
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Jun 5, 2018
Issued Date -
N/A
app pub date -
Jul 29, 2016
filing date -
Jul 29, 2016
priority date (Note) -
In Force
status (Latency Note)
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Abstract
A semiconductor device includes a first passivation layer over an interconnect structure. The semiconductor device further includes a first redistribution line (RDL) via extending through an opening in the first passivation layer to electrically connect to the interconnect structure. The first RDL via includes a first conductive material. The semiconductor device further includes an RDL over the first passivation layer and electrically connected to the first RDL via. The RDL comprises a second conductive material different from the first conductive material. The RDL extends beyond the first RDL via in a direction parallel to a top surface of the first passivation layer.
First Claim
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- 15 United States
- 10 France
- 8 Japan
- 7 China
- 5 Korea
- 2 Other
Patent Owner(s)
Patent Owner | Address | |
---|---|---|
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD | HSINCHU |
International Classification(s)

- 2016 Application Filing Year
- H01L Class
- 27971 Applications Filed
- 23507 Patents Issued To-Date
- 84.05 % Issued To-Date
Inventor(s)
Inventor Name | Address | # of filed Patents | Total Citations |
---|---|---|---|
Cheng, Anhao | Hsinchu, TW | 31 | 23 |
# of filed Patents : 31 Total Citations : 23 | |||
Liu, Chun-Chang | Hsinchu, TW | 13 | 30 |
# of filed Patents : 13 Total Citations : 30 |
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Patent Citation Ranking
- 1 Citation Count
- H01L Class
- 23.71 % this patent is cited more than
- 7 Age
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