Semiconductor device having a dual material redistribution line
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United States of America Patent
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Jun 5, 2018
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app pub date -
Jul 29, 2016
filing date -
Jul 29, 2016
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Abstract
A semiconductor device includes a first passivation layer over an interconnect structure. The semiconductor device further includes a first redistribution line (RDL) via extending through an opening in the first passivation layer to electrically connect to the interconnect structure. The first RDL via includes a first conductive material. The semiconductor device further includes an RDL over the first passivation layer and electrically connected to the first RDL via. The RDL comprises a second conductive material different from the first conductive material. The RDL extends beyond the first RDL via in a direction parallel to a top surface of the first passivation layer.
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