Monolithic microwave integrated circuit (MMIC) and method for forming such MMIC having rapid thermal annealing compensation elements
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United States of America Patent
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app pub date -
Jul 26, 2016
filing date -
Jul 26, 2016
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Abstract
A method and structure, the structure having a substrate, an active device in an active device semiconductor region; of the substrate, a microwave transmission line, on the substrate, electrically connected to the active device, and microwave energy absorbing “dummy” fill elements on the substrate. The method includes providing a structure having a substrate, an active device region on a surface of the structure, an ohmic contact material on the active device region, and a plurality of “dummy” fill elements on the surface to provide uniform heating of the substrate during a rapid thermal anneal process, the ohmic contact material and the “dummy” fill elements having the same radiant energy reflectivity. The rapid thermal anneal processing forms an ohmic contact between an ohmic contact material and the active device region and simultaneously converts the “dummy” fill elements into microwave lossy “dummy” fill elements.
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International Classification(s)
- 2016 Application Filing Year
- H01L Class
- 27971 Applications Filed
- 23507 Patents Issued To-Date
- 84.05 % Issued To-Date
Cited Art Landscape
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- 0 Citation Count
- H01L Class
- 0 % this patent is cited more than
- 7 Age
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| 7.5 Year Payment | $3600.00 | $1800.00 | $900.00 | Jan 3, 2026 |
| 11.5 Year Payment | $7400.00 | $3700.00 | $1850.00 | Jan 3, 2030 |
