Integrated circuit structure having crown-shaped semiconductor strips and recesses in the substrate from etched dummy fins

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United States of America Patent

PATENT NO 10297555
APP PUB NO 20180033740A1
SERIAL NO

15399237

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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An integrated circuit structure includes a semiconductor substrate having a plurality of semiconductor strips, a first recess being formed by two adjacent semiconductor strips among the plurality of semiconductor strips, a second recess being formed within the first recess, and an isolation region being provided in the first recess and the second recess. The second recess has a lower depth than the first recess.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTDNO 8 LI-HSIN RD VI HSINCHU SCIENCE PARK HSINCHU 300

International Classification(s)

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  • 2017 Application Filing Year
  • H01L Class
  • 30754 Applications Filed
  • 25260 Patents Issued To-Date
  • 82.14 % Issued To-Date
Click to zoom InYear of Issuance% of Matters IssuedCumulative IssuancesYearly Issuances2017201820192020202120222023202420250255075100

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chiu, Yi-Wei Kaohsiung, TW 145 922
Kuan, Wan-Chun Chiayi, TW 10 16
Liao, Chih-Teng Hsin-Chu, TW 87 366
Weng, Tzu-Chan Kaohsiung, TW 40 300

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Patent Citation Ranking

  • 4 Citation Count
  • H01L Class
  • 32.24 % this patent is cited more than
  • 6 Age
Citation count rangeNumber of patents cited in rangeNumber of patents cited in various citation count ranges65791234589227414370441814821601 - 1011 - 2021 - 3031 - 4041 - 5051 - 6061 - 7071 - 8081 - 9091 - 100100 +010002000300040005000600070008000900010000110001200013000

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