Semiconductor device and manufacturing method of semiconductor device
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United States of America Patent
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Dec 18, 2018
Grant Date -
Feb 1, 2018
app pub date -
Jul 25, 2017
filing date -
Jul 27, 2016
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Abstract
A semiconductor device includes a semiconductor substrate having a first surface, which includes an element forming region and an element isolation region, and a second surface opposite to the first surface, a semiconductor element formed on the semiconductor substrate in the element forming region, an insulator formed on the semiconductor substrate in the element isolation region, a first wiring layer formed on the first surface of the semiconductor substrate, the first wiring layer being connected to the semiconductor element, an alignment mark formed on the semiconductor substrate in the element isolation region, the entire alignment mark overlapping with the insulator in a plan view of the semiconductor device, and a second wiring layer formed on the second surface of the semiconductor substrate.
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