Semiconductor device and manufacturing method thereof

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 10269706
APP PUB NO 20180033727A1
SERIAL NO

15220078

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Abstract

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A semiconductor device includes a first interlayer dielectric (ILD) layer disposed over a substrate, and a first metal wiring pattern formed in the first interlayer dielectric layer and extending in a first direction parallel with the substrate. In a cross section along a second direction which crosses the first direction and is in parallel with the substrate, a top of the first metal wiring pattern is covered by a first two-dimensional material layer.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD8 LI-HSIN RD 6 HSINCHU SCIENCE PARK HSINCHU 300-78

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Lee, Ming-Han Taipei, TW 171 447
Shue, Shau-Lin Hsinchu, TW 447 7036

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