Programmable via devices with metal/semiconductor via links and fabrication methods thereof
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United States of America Patent
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Aug 21, 2018
Grant Date -
Feb 1, 2018
app pub date -
Oct 4, 2017
filing date -
Sep 28, 2015
priority date (Note) -
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Abstract
Programmable via devices and fabrication methods thereof are presented. The programmable via devices include, for instance, a first metal layer and a second metal layer electrically connected by a via link. The via link includes a semiconductor portion and a metal portion, where the via link facilitates programming of the programmable via device by applying a programming current through the via link to migrate materials between the semiconductor portion and the metal portion to facilitate a change of an electrical resistance of the via link. In one embodiment, the programming current facilitates formation of at least one gap region within the via link, the at least one gap region facilitating the change of the electrical resistance of the via link.
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