Methods of forming NMOS and PMOS finFET devices and the resulting product
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Aug 21, 2018
Grant Date -
Feb 1, 2018
app pub date -
Oct 10, 2017
filing date -
Jan 29, 2015
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A device includes an NMOS FinFET device including a first fin. The first fin includes a first strain relaxed buffer layer doped with carbon and a first channel semiconductor material formed above the carbon-doped strain relaxed buffer layer. A PMOS FinFET device includes a second fin. The second fin includes a second strain relaxed buffer layer and a second channel semiconductor material formed above the carbon-doped strain relaxed buffer layer. A first gate structure is positioned around a portion of the NMOS fin. A second gate structure is positioned around a portion of the PMOS fin.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully