Semiconductor die singulation and structures formed thereby

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United States of America Patent

PATENT NO 10720360
APP PUB NO 20180033695A1
SERIAL NO

15374885

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Abstract

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An embodiment method includes providing a wafer including a first integrated circuit die, a second integrated circuit die, and a scribe line region between the first integrated circuit die and the second integrated circuit die. The method further includes forming a kerf in the scribe line region and after forming the kerf, using a mechanical sawing process to fully separate the first integrated circuit die from the second integrated circuit die. The kerf extends through a plurality of dielectric layers into a semiconductor substrate.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTDHSINCHU 300-78

International Classification(s)

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  • 2016 Application Filing Year
  • H01L Class
  • 27971 Applications Filed
  • 23507 Patents Issued To-Date
  • 84.05 % Issued To-Date
Click to zoom InYear of Issuance% of Matters IssuedCumulative IssuancesYearly Issuances20162017201820192020202120222023202420250255075100

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chang, Fu-Chen Hsin-Chu, TW 51 103
Chen, Wen-Ming Zhunan Township, TW 34 154
Huang, Cheng-Lin Hsin-Chu, TW 119 1373

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Patent Citation Ranking

  • 2 Citation Count
  • H01L Class
  • 41.95 % this patent is cited more than
  • 5 Age
Citation count rangeNumber of patents cited in rangeNumber of patents cited in various citation count ranges10471134176731949445241110611701 - 1011 - 2021 - 3031 - 4041 - 5051 - 6061 - 7071 - 8081 - 9091 - 100100 +0100020003000400050006000700080009000100001100012000130001400015000

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