Semiconductor die singulation and structures formed thereby
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Jul 21, 2020
Grant Date -
Feb 1, 2018
app pub date -
Dec 9, 2016
filing date -
Jul 29, 2016
priority date (Note) -
In Force
status (Latency Note)
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Abstract
An embodiment method includes providing a wafer including a first integrated circuit die, a second integrated circuit die, and a scribe line region between the first integrated circuit die and the second integrated circuit die. The method further includes forming a kerf in the scribe line region and after forming the kerf, using a mechanical sawing process to fully separate the first integrated circuit die from the second integrated circuit die. The kerf extends through a plurality of dielectric layers into a semiconductor substrate.
First Claim
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Family

- 15 United States
- 10 France
- 8 Japan
- 7 China
- 5 Korea
- 2 Other
Patent Owner(s)
Patent Owner | Address | |
---|---|---|
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD | HSINCHU 300-78 |
International Classification(s)

- 2016 Application Filing Year
- H01L Class
- 27971 Applications Filed
- 23507 Patents Issued To-Date
- 84.05 % Issued To-Date
Inventor(s)
Inventor Name | Address | # of filed Patents | Total Citations |
---|---|---|---|
Chang, Fu-Chen | Hsin-Chu, TW | 51 | 103 |
# of filed Patents : 51 Total Citations : 103 | |||
Chen, Wen-Ming | Zhunan Township, TW | 34 | 154 |
# of filed Patents : 34 Total Citations : 154 | |||
Huang, Cheng-Lin | Hsin-Chu, TW | 119 | 1373 |
# of filed Patents : 119 Total Citations : 1373 |
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Patent Citation Ranking
- 2 Citation Count
- H01L Class
- 41.95 % this patent is cited more than
- 5 Age
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- No Forward Cites to Display

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