Semiconductor device manufacturing method

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United States of America Patent

PATENT NO 11380585
APP PUB NO 20180033694A1
SERIAL NO

15550801

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Abstract

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A semiconductor device manufacturing method includes thinning a wafer to form a wafer having an annular protruding portion on a peripheral portion thereof by grinding a central portion of a back surface of the wafer and then performing wet etching on the back surface of the wafer, forming a backside electrode on the back surface of the wafer, performing plating to evenly form a metal film on a portion of the backside electrode on the annular protruding portion, attaching a dicing tape to the metal film, and dicing the wafer having the dicing tape attached thereto.

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Patent Owner(s)

Patent OwnerAddress
MITSUBISHI ELECTRIC CORPORATION7-3 MARUNOUCHI 2-CHOME CHIYODA-KU TOKYO 100-8310

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Sunamoto, Masatoshi Tokyo, JP 8 57
Ueno, Ryuji Tokyo, JP 234 2083

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