Structure and formation method of interconnection structure of semiconductor device
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United States of America Patent
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Sep 11, 2018
Grant Date -
Feb 1, 2018
app pub date -
Jul 29, 2016
filing date -
Jul 29, 2016
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Abstract
Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a gate stack over a semiconductor substrate and a spacer element over a sidewall of the gate stack. The spacer element is substantially free of oxygen. The semiconductor device structure also includes a dielectric layer over the semiconductor substrate, and the dielectric layer surrounds the gate stack and the spacer element. The semiconductor device structure further includes a conductive contact penetrating through the dielectric layer and electrically connected to a conductive feature over the semiconductor substrate. An angle between a sidewall of the conductive contact and a top surface of the spacer element is in a range from about 90 degrees to about 120 degrees, and the conductive contact covers a portion of the spacer element.
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