Gap-fill polymer for filling fine pattern gaps and method for fabricating semiconductor device using the same

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United States of America Patent

PATENT NO 9892964
SERIAL NO

15470387

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A gap-fill polymer for filling fine pattern gaps, which has a low dielectric constant (low-k) and excellent gap filling properties, may consist of a compound formed by condensation polymerization of a first oligomer represented by the formula 1 and a second oligomer represented by the formula 2.

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Patent OwnerAddress
SK HYNIX INCGYEONGGI DO SOUTH KOREA GYEONGGI-DO

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Jang, Jin Wook Chungcheongbuk-do, KR 12 42
Kim, Min Su Gyeonggi-do, KR 246 1674
Lee, Geun Su Gyeonggi-do, KR 111 4675
Lee, Sung Jae Gyeonggi-do, KR 66 183
Lee, Young Sun Gyeonggi-do, KR 24 233
Moon, Ji Won Gyeonggi-do, KR 24 89
Yi, Sang Youl Gyeonggi-do, KR 2 9

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