Formation method of interconnection structure of semiconductor device
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United States of America Patent
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May 19, 2020
Grant Date -
Feb 1, 2018
app pub date -
Jul 29, 2016
filing date -
Jul 29, 2016
priority date (Note) -
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Abstract
Structures and formation methods of a semiconductor device structure are provided. The method includes forming a dielectric layer over a semiconductor substrate and forming an opening in the dielectric layer to expose a conductive element. The method also includes forming a conductive layer over the conductive element and modifying an upper portion of the conductive layer using a plasma operation to form a modified region. The method further includes forming a conductive plug over the modified region.
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