Method for forming conductive structure in semiconductor structure
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United States of America Patent
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May 15, 2018
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app pub date -
Jul 29, 2016
filing date -
Jul 29, 2016
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Abstract
A method for manufacturing a semiconductor structure is provided. The method includes forming a mask layer over a substrate, forming a material layer over the mask layer, forming a first blocking structure and a second blocking structure in the material layer separated from each other, and forming a first opening and a second opening in the material layer aligned with the first blocking structure. The method further includes forming a first spacer on sidewalls of the first opening and a second spacer on sidewalls of the second opening, forming a third opening and a fourth opening in the material layer aligned with the second blocking structure, etching the mask layer through the first opening, the second opening, the third opening, and the fourth opening.
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