Reducing contact resistance in vias for copper interconnects
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United States of America Patent
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Nov 5, 2019
Grant Date -
Feb 1, 2018
app pub date -
Oct 12, 2017
filing date -
Jun 4, 2015
priority date (Note) -
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Abstract
A method of forming an electrical transmission structure that includes forming an opening through an interlevel dielectric layer to expose at least one electrically conductive feature and forming a shield layer on the opening. A gouge is formed in the electrically conductive feature through the opening using a subtractive method during which the shield layer protects the interlevel dielectric layer from being damaged by the subtractive method. A contact is formed within the opening in electrical communication with the at least one electrically conductive feature.
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