Substrate bonding method
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United States of America Patent
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Apr 14, 2020
Grant Date -
Feb 1, 2018
app pub date -
Feb 25, 2016
filing date -
Mar 10, 2015
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Abstract
A substrate bonding method includes: preparing a first substrate having a first silicon oxide film with a film thickness of 50 nm or more arranged on the first substrate, and a second substrate having a second silicon oxide film arranged on the second substrate; bonding the first substrate and the second substrate together in a state where the first silicon oxide film and the second silicon oxide film face each other; and heating and bonding the first substrate and the second substrate. The preparing of the first substrate and the second substrate includes preparing the second substrate having the second silicon oxide film with a film thickness of 2.5 nm or less. The heating and bonding of the first substrate and the second substrate includes heating the first substrate and the second substrate at a temperature of 200° C. or more and 800° C. or less.
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