Three-dimensional memory device containing composite word lines including a metal silicide and an elemental metal and method of making thereof
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United States of America Patent
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Apr 30, 2019
Grant Date -
Feb 1, 2018
app pub date -
Oct 11, 2017
filing date -
Oct 29, 2015
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Abstract
Word lines for a three-dimensional memory device can be formed by forming a stack of alternating layers comprising insulating layers and sacrificial material layers and memory stack structures vertically extending therethrough. Backside recesses are formed by removing the sacrificial material layers through a backside via trench. A metal silicide layer and metal portion are formed in the backside recesses to form the word lines including a metal portion, a metal silicide layer, and optionally, a silicon-containing layer.
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