Uniform back side exposure of through-silicon vias
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United States of America Patent
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Sep 10, 2019
Grant Date -
Feb 1, 2018
app pub date -
Oct 10, 2017
filing date -
Jan 29, 2015
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Abstract
Systems and methods for uniform back side exposure of through-silicon vias (TSVs) are disclosed. In one embodiment, a semiconductor device comprises a substrate having a front side with circuit elements formed thereon, and a back side opposite the front side. A TSV extends between the front side and the back side of the substrate, and a dummy feature is disposed over the back side of the substrate, the dummy feature laterally spaced apart from the TSV and substantially coplanar with the TSV. In another embodiment, a semiconductor device comprises a substrate having a TSV formed therethrough, with a control material disposed over the back side of the substrate, the TSV substantially coplanar with the control material.
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