Method of manufacturing semiconductor devices
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United States of America Patent
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Oct 30, 2018
Grant Date -
Feb 1, 2018
app pub date -
Feb 28, 2017
filing date -
Jul 27, 2016
priority date (Note) -
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Abstract
A method of manufacturing a semiconductor device includes alternately stacking mold insulating layers and sacrificial layers on a substrate; forming channel holes penetrating through the mold insulating layers and the sacrificial layers and allowing recessed regions to be formed in the substrate; cleaning a surface of the recessed regions in such a manner that processes of forming a first protective layer in an upper region of the channel holes and performing an anisotropic dry etching process on the recessed regions in a lower portion of the channel holes are alternately repeated one or more times, in-situ; and forming epitaxial layers on the recessed regions of the substrate.
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