Method for wet etching of block copolymer self-assembly pattern
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United States of America Patent
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Dec 11, 2018
Grant Date -
Feb 1, 2018
app pub date -
Feb 2, 2016
filing date -
Feb 17, 2015
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Abstract
The present invention relates to a process for selectively removing a block on one side using a wet etching process in connection with self-assembly block copolymer thin films that have etching-resisting properties different from each other. The present invention can form a vertical nanopore structure having a high aspect ratio, even in the case of a thick film which has a vertically oriented cylinder self-assembly structure and which has one or more periods, by overcoming the limit of the prior art, which cannot implement a vertical pore structure through wet etching.
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