METHOD OF FABRICATING A SEMICONDUCTOR STRUCTURE

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United States of America Patent

SERIAL NO

15221586

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Abstract

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A method of fabricating a semiconductor structure is provided. A substrate surface is provided and a first layer is disposed on the substrate surface. A second layer covering the first layer is formed wherein the materials of the first layer and the second layer are different. A first polishing operation is performed on the second layer until a first polished surface exposing a portion of the first layer is obtained. A second polishing operation is performed on the first polished surface to obtain a second polished surface wherein an upper portion of the exposed portion of the first layer is removed. None of the substrate is exposed from the first polished surface and the second polished surface.

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Patent Owner(s)

Patent OwnerAddress
UNITED MICROELECTRONICS CORPNO 3 LI-HSIN ROAD 2 SCIENCE-BASED INDUSTRIAL PARK HSIN-CHU CITY

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hsu, Li-Chieh Taichung City, TW 26 72
Huang, Po-Cheng Kaohsiung City, TW 64 300
Li, Yu-Ting Chiayi City, TW 37 177
Lin, Wen-Chin Tainan City, TW 74 882
Liu, Yi-Liang Tainan City, TW 13 51
Tsai, Fu-Shou Keelung City, TW 23 39
Wang, Chun-Yi Chang-Hua Hsien, TW 20 309
Wu, Chun-Yuan Yun-Lin County, TW 93 1150

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