Self-aligning source, drain and gate process for III-V nitride MISHEMTs

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United States of America Patent

PATENT NO 10679860
APP PUB NO 20180033631A1
SERIAL NO

15551821

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Abstract

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A method for fabrication of high electron mobility transistor (HEMT) semiconductor devices is presented. The method includes providing a substrate, growing a HEMT layer structure on the substrate; and self-aligned common metal stack formation of source, drain and gate electrodes on the HEMT layer structure using a single lithographic mask.

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AGENCY FOR SCIENCE TECHNOLOGY AND RESEARCHSINGAPORE 138632

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Bera, Lakshmi Kanta Singapore, SG 10 529
Dolmanan, Surani Bin Singapore, SG 4 35
Loke, Yee Chong Singapore, SG 7 19
Tham, Wai Hoe Singapore, SG 1 12
Tripathy, Sudhiranjan Singapore, SG 10 126

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