Doped ALD films for semiconductor patterning applications
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Sep 28, 2016
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Jul 29, 2016
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Methods and apparatuses for patterning substrates using a positive patterning scheme are described herein. Methods involve receiving a substrate having a patterned core material, depositing a doped spacer material conformally over the patterned core material, selectively etching the core material to the doped spacer material to form a spacer mask, and using the spacer mask to etch a target layer on the substrate. Spacer materials may be doped using any of boron, gallium, phosphorus, arsenic, aluminum, and hafnium. Embodiments are suitable for applications in multiple patterning applications.
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