Silicon germanium selective oxidation process
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United States of America Patent
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app pub date -
Jan 24, 2017
filing date -
Jul 29, 2016
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Abstract
Implementations described herein relate to selective oxidation processes for semiconductor device manufacturing. In one implementation, the process includes delivering a substrate having a semiconductor device comprising at least a silicon material and a silicon germanium material formed thereon to a process chamber. Process variables are determined based upon the germanium concentration of the silicon germanium material and a desired oxide thickness and a selective oxidation process is performed utilizing the determined process variables.
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