Compositions and Methods Using Same for Carbon Doped Silicon Containing Films
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Jul 19, 2017
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Jul 27, 2016
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Abstract
A composition and method for using the composition in the fabrication of an electronic device are disclosed. Compounds, compositions and methods for depositing a low dielectric constant (<4.0) and high oxygen ash resistance silicon-containing film such as, without limitation, a carbon doped silicon oxide, are disclosed.
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