CVD silicon monolayer formation method and gate oxide ALD formation on semiconductor materials
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United States of America Patent
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Aug 6, 2019
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Feb 1, 2018
app pub date -
Oct 6, 2017
filing date -
Apr 21, 2014
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Abstract
Methods for depositing silicon include cycling dosing between 1 and 100 cycles of one or more first chlorosilane precursors on a III-V surface at a temperature between 300° C. and 500° C. to form a first layer. Methods may include desorbing chlorine from the first layer by treating the first layer with atomic hydrogen to form a second layer. Methods may include forming a silicon multilayer on the second layer by cycling dosing between 1 and 100 cycles of one or more second chlorosilane precursors and atomic hydrogen at a temperature between 300° C. and 500° C. A layered composition includes a first layer selected from the group consisting of InxGa1−xAs, InxGa1−xSb, InxGa1−xN, SiGe, and Ge, wherein X is between 0.1 and 0.99, and a second layer, wherein the second layer comprises Si—H and Si—OH.
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