Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
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United States of America Patent
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Jul 21, 2020
Grant Date -
Feb 1, 2018
app pub date -
Jul 21, 2017
filing date -
Jul 26, 2016
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Abstract
A method of manufacturing a semiconductor device is provided. The method includes forming a film on a substrate by causing a first precursor and a second precursor to intermittently react with each other by repeating a cycle a plurality of times, the cycle alternately performing supplying the first precursor, which satisfies an octet rule and has a first pyrolysis temperature, to the substrate and supplying the second precursor, which does not satisfy the octet rule and has a second pyrolysis temperature lower than the first pyrolysis temperature, to the substrate. In the act of forming the film, a supply amount of the first precursor is set larger than a supply amount of the second precursor.
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