MASK BLANKS, PHASE SHIFT MASK, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
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Jan 19, 2016
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Mar 24, 2015
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Abstract
A mask blank including a phase shift film is provided, wherein the phase shift film has a predetermined transmittance and a predetermined phase difference with respect to exposure light of an ArF excimer laser, and it is relatively easy to detect an etching end point for detecting a boundary between the phase shift film and a transparent substrate upon the EB defect repair.
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