Method for manufacturing quantum dot color filter substrate

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United States of America Patent

PATENT NO 9904097
SERIAL NO

14914638

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Abstract

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The present invention provides a method for manufacturing a quantum dot color filter substrate, in which a black photoresist layer and a transparent photoresist layer are first coated and formed on a backing plate in sequence and then, first, second, and third patterns of a photo mask having different grey levels are used to pattern the black photoresist layer and the transparent photoresist layer to obtain a plurality of transparent barrier walls corresponding to the first pattern, sub spacers corresponding to the second pattern and located on the transparent barrier walls, and main spacers corresponding to the third pattern and located on the transparent barrier walls and also to obtain a plurality of black barrier walls covered by the plurality of transparent barrier walls, the plurality of black barrier walls and the plurality of transparent barrier walls located thereon collectively defining a plurality of pixel barrier walls; and then, patterned quantum dot layers are formed in sub-pixel zones that are delimited and surrounded by the plurality of pixel barrier walls by means of inkjet printing such that accuracy of inkjet printing is greatly improved.

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Patent Owner(s)

Patent OwnerAddress
SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO LTDNO 9-2 TANGMING RD GUANGMING NEW DISTRICT SHENZHEN GUANGDONG 518132

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Li, Lanyan Shenzhen, CN 5 14
Liang, Yuheng Shenzhen, CN 9 35

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