Apparatus for manufacturing a second substrate on a first substrate including removal of the first substrate
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United States of America Patent
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Jan 26, 2021
Grant Date -
Feb 1, 2018
app pub date -
Jul 5, 2017
filing date -
Jul 26, 2016
priority date (Note) -
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status (Latency Note)
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Abstract
An apparatus includes a deposition chamber housing that accommodates a growth substrate, a supply nozzle to supply a deposition gas for forming a target large-size substrate on the growth substrate into the deposition chamber housing, a susceptor to support the growth substrate and expose a rear surface of the growth substrate to an etch gas, and an inner liner connected to the susceptor. The inner liner is to isolate the etch gas from the deposition gas and guide the etch gas toward the rear surface of the growth substrate. The susceptor includes a center hole that exposes the rear surface of the growth substrate and a support protrusion supporting the growth substrate, the support protrusion protruding toward the center of the center hole from an inner sidewall of the susceptor defining the center hole.
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