FABRICATION METHOD OF STRONTIUM NIOBIUM OXYNITRIDE FILM HAVING SMALL CARRIER DENSITY AND ITS USE
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United States of America Patent
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Feb 1, 2018
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Jun 20, 2017
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Jul 28, 2016
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Abstract
The present invention provides a method for growing a strontium niobium oxynitride film, the method comprising: (a) growing, on a strontium titanate substrate, by a sputtering method, the strontium niobium oxynitride film having carrier density of not more than 1×1018 cm−3. The spirit of the present invention includes: (I) strontium niobium oxynitride having carrier density not more than 1×1018 cm−3, (II) a strontium niobium oxynitride film having carrier density not more than 1×1018 cm−3, (III) a photosemiconductor substrate comprising the strontium niobium oxynitride film, (IV) a hydrogen generation device comprising the photosemiconductor substrate, and (V) a hydrogen generation method using the photosemiconductor substrate. The present invention provides a fabrication method of a strontium niobium oxynitride film having small carrier density and its use.
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