Interconnect structure and method of manufacturing the same

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United States of America Patent

PATENT NO 10785865
APP PUB NO 20180027648A1
SERIAL NO

15723099

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Abstract

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A method for manufacturing an interconnect structure is provided. The method includes the following steps. An opening is through a substrate. A low-k dielectric block is formed in the opening. At least one first via is formed through the low-k dielectric block. A first conductor is formed in the first via.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD8 LI-HSIN RD 6 HSINCHU SCIENCE PARK HSINCHU 300-78

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hsueh, Fu-Lung Kaohsiung, TW 147 2603
Jou, Chewn-Pu Hsinchu, TW 342 2019
Lee, Chien-Hsun Hsinchu County, TW 168 3789
Wu, Jiun-Yi Taoyuan, TW 60 116

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