Semiconductor device
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United States of America Patent
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Oct 9, 2018
Grant Date -
Jan 25, 2018
app pub date -
Jul 18, 2017
filing date -
Jul 19, 2016
priority date (Note) -
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Abstract
To provide an asynchronous circuit capable of power gating, a semiconductor device is configured with first to third terminals, a latch circuit, and a memory circuit. The third terminal outputs “false” when “false” is input to the first terminal and the second terminal. The third terminal outputs “true” when “true” is input to the first terminal and the second terminal. The third terminal outputs a truth value that is the same as the previous output, when “true” is input to one of the first terminal and the second terminal and “false” is input to the other of the first terminal and the second terminal. The memory circuit is capable of storing data stored in the latch circuit, while supply of a power supply voltage is stopped. The memory circuit includes a transistor that contains a metal oxide in a channel formation region.
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