Organic field-effect-transistors with low contact resistance
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United States of America Patent
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Apr 30, 2019
Grant Date -
Jan 25, 2018
app pub date -
Feb 1, 2016
filing date -
Feb 4, 2015
priority date (Note) -
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Abstract
This invention provides a transistor device structure that incorporates a self-aligned doped contact formed by inserting a molecularly-thin layer of bonded anions between the semiconductor and the source-drain electrode array wherein the semiconductor is p-doped at the interface with the bonded-anion layer, and a method of making this structure using oxidant species incorporated into the molecularly-thin layer. The device shows ohmic hole injection and hole extraction at the contacts to give high-performance transistor characteristics with low contact resistance.
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