Semiconductor device
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Nov 6, 2018
Grant Date -
Jan 25, 2018
app pub date -
Aug 16, 2017
filing date -
Nov 20, 2009
priority date (Note) -
In Force
status (Latency Note)
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Abstract
An object is to achieve low power consumption and a long lifetime of a semiconductor device having a wireless communication function. The object can be achieved in such a manner that a battery serving as a power supply source and a specific circuit are electrically connected to each other through a transistor in which a channel formation region is formed using an oxide semiconductor. The hydrogen concentration of the oxide semiconductor is lower than or equal to 5×1019 (atoms/cm3). Therefore, leakage current of the transistor can be reduced. As a result, power consumption of the semiconductor device in a standby state can be reduced. Further, the semiconductor device can have a long lifetime.
First Claim
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Family

- 15 United States
- 10 France
- 8 Japan
- 7 China
- 5 Korea
- 2 Other
Patent Owner(s)
Patent Owner | Address | |
---|---|---|
SEMICONDUCTOR ENERGY LABORATORY CO LTD | KANAGAWA KANAGAWA |
International Classification(s)
Inventor(s)
Inventor Name | Address | # of filed Patents | Total Citations |
---|---|---|---|
Kato, Kiyoshi | Kanagawa, JP | 544 | 11857 |
# of filed Patents : 544 Total Citations : 11857 | |||
Koyama, Jun | Kanagawa, JP | 1633 | 57063 |
# of filed Patents : 1633 Total Citations : 57063 |
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- 4 Citation Count
- H04M Class
- 21.43 % this patent is cited more than
- 7 Age
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