Vertical schottky contact FET

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United States of America Patent

PATENT NO 10170619
APP PUB NO 20180026135A1
SERIAL NO

15683351

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Abstract

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A semiconductor structure containing a vertical Schottky contact transistor is provided in which the contact resistance as well as the junction resistance is improved. The vertical Schottky contact transistor includes a bottom Schottky contact source/drain structure and a top Schottky contact source/drain structure located at opposing ends of a semiconductor channel region. The bottom Schottky contact source/drain structure includes a base portion and a vertically extending portion.

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Patent Owner(s)

Patent OwnerAddress
SAMSUNG ELECTRONICS CO LTDGYEONGGI DO SOUTH KOREA GYEONGGI-DO

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Balakrishnan, Karthik White Plains, US 339 2298
Cheng, Kangguo Schenectady, US 3099 32749
Hashemi, Pouya White Plains, US 602 5206
Reznicek, Alexander Troy, US 1451 12717

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