Semiconductor device and method of manufacturing the same
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Nov 6, 2018
Grant Date -
Jan 25, 2018
app pub date -
Jul 14, 2017
filing date -
Jul 20, 2016
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
In an LDMOS having an element isolation region of an STI structure, there is prevented an occurrence of insulation breakdown which might be caused when electrons generated in a semiconductor substrate near an edge portion of a bottom face of the element isolation region are poured into a gate electrode. Immediately over an upper surface of an offset region adjacent to the element isolation region embedded in a main surface of the semiconductor substrate between a source region and a drain region, there is provided a trench penetrating a silicon film forming the gate electrode. As a consequence, the silicon film and a metal film for filling the trench form the gate electrode.
First Claim
Other Claims data not available
Family
International Classification(s)
- 2017 Application Filing Year
- H01L Class
- 30754 Applications Filed
- 25260 Patents Issued To-Date
- 82.14 % Issued To-Date
Cited Art Landscape
Patent Citation Ranking
- 1 Citation Count
- H01L Class
- 23.71 % this patent is cited more than
- 7 Age
Maintenance Fees
| Fee | Large entity fee | small entity fee | micro entity fee | due date |
|---|---|---|---|---|
| 7.5 Year Payment | $3600.00 | $1800.00 | $900.00 | May 6, 2026 |
| 11.5 Year Payment | $7400.00 | $3700.00 | $1850.00 | May 6, 2030 |
