Power transistor having perpendicularly-arranged field plates and method of manufacturing the same
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United States of America Patent
Stats
-
Aug 13, 2019
Grant Date -
Jan 25, 2018
app pub date -
Jul 19, 2017
filing date -
Jul 20, 2016
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A semiconductor device in a semiconductor substrate having a first main surface includes a transistor array and a termination region. The transistor array includes a source region, a drain region, a body region, a drift zone, and a gate electrode at the body region. The gate electrode is configured to control a conductivity of a channel in the body region. The body region and the drift zone are disposed along a first horizontal direction between the source region and the drain region. The transistor array further includes first field plate trenches in the drift zone. A longitudinal axis of the first field plate trenches extends in the first horizontal direction. The semiconductor device further includes a second field plate trench, a longitudinal axis of the second field plate trench extending in a second horizontal direction perpendicular to the first direction.
First Claim
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International Classification(s)
- 2017 Application Filing Year
- H01L Class
- 30754 Applications Filed
- 25260 Patents Issued To-Date
- 82.14 % Issued To-Date
Cited Art Landscape
Patent Citation Ranking
- 0 Citation Count
- H01L Class
- 0 % this patent is cited more than
- 6 Age
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