High acceptor level doping in silicon germanium
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United States of America Patent
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Jul 23, 2019
Grant Date -
Jan 25, 2018
app pub date -
Aug 3, 2017
filing date -
Jul 20, 2016
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Abstract
A semiconductor structure is provided in which gallium-doped sacrificial epitaxial or polycrystalline germanium layer is formed on a silicon germanium substrate having a high percentage of germanium followed by annealing to diffuse the gallium into the silicon germanium substrate. The germanium layer is selectively removed to expose the surface of a gallium-doped silicon germanium region within the silicon germanium substrate. The process has application to the formation of electrically conductive regions within integrated circuits such as source/drain regions and junctions without the introduction of carbon into such regions.
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