B-TRAN Geometry and Structure That Provides Both High Gain and High Current Density

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United States of America Patent

SERIAL NO

15530663

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Abstract

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Three optimizations are provided for B-TRAN devices which include field plate trenches: 1) the trench dielectric thickness is large enough to withstand the base-to-emitter voltage, but thin enough to provide good electrical coupling between the poly field plate and the adjacent p-type silicon; 2) the base contact width is small enough to provide an acceptably low reverse base contact region pinch-off voltage, but large enough to avoid degradation of both base resistance; and 3) the emitter width is small enough to keep an acceptably high current density at the emitter's center.

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Patent Owner(s)

Patent OwnerAddress
IDEAL POWER INCAUSTIN TX 78744

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Alexander, William C Spicewood, US 111 1553
Blanchard, Richard A Los Altos, US 334 6868

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