Semiconductor device, power circuit, computer, and method for manufacturing semiconductor device

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United States of America Patent

PATENT NO 10079285
APP PUB NO 20180026107A1
SERIAL NO

15430739

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Abstract

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A semiconductor device according to an embodiment includes a nitride semiconductor layer, an insulating layer provided on the nitride semiconductor layer, a first region provided in the nitride semiconductor layer, and a second region which is provided between the first region and the insulating layer in the nitride semiconductor layer and has a higher electric resistivity than the first region.

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Patent Owner(s)

Patent OwnerAddress
KABUSHIKI KAISHA TOSHIBAKANAGAWA KANAGAWA

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Saito, Hisashi Yokohama, JP 66 585
Shimizu, Tatsuo Shinagawa, JP 299 2391

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