P-TYPE OXIDE SEMICONDUCTOR, METHOD FOR FORMING P-TYPE OXIDE SEMICONDUCTOR, AND TRANSISTOR WITH THE P-TYPE OXIDE SEMICONDUCTOR

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United States of America Patent

SERIAL NO

15621135

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Provided are a p-type oxide semiconductor, a method of forming the p-type oxide semiconductor, and a transistor with the p-type oxide semiconductor. The p-type oxide semiconductor includes an alkali metal and a tin oxide.

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Patent Owner(s)

Patent OwnerAddress
ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE218 GAJEONG-RO YUSEONG-GU DAEJEON 34129

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
CHO, Kyoung Ik Daejeon, KR 77 703
CHO, Sung Haeng Cheongju-si, KR 24 116
HWANG, Chi-Sun Daejeon, KR 81 264
LEE, Su Jae Daejeon, KR 30 142
NAM, Sooji Daejeon, KR 14 11
PI, Jae-Eun Daejeon, KR 33 64

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