Transistor, thin-film transistor substrate, and liquid crystal display
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United States of America Patent
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Sep 11, 2018
Grant Date -
Jan 25, 2018
app pub date -
Apr 14, 2016
filing date -
Apr 28, 2015
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Abstract
The present technique relates to a transistor that uses an oxide semiconductor as its channel layer and that is capable of suppressing fluctuations in threshold voltage, and to a thin-film transistor substrate and a liquid crystal display that include such a transistor. The transistor is configured such that an overlap length, which is a length of overlap in plan view between the source electrode and the channel protective film in a direction from the source electrode toward the drain electrode, is longer than an overlap length, which is a length of overlap in plan view between the drain electrode and the channel protective film in a direction from the drain electrode toward the source electrode.
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